Critical thickness of MBE-grown Ga1-xInxSb (x<0.2) on GaSb
Identifieur interne : 005786 ( Main/Repository ); précédent : 005785; suivant : 005787Critical thickness of MBE-grown Ga1-xInxSb (x<0.2) on GaSb
Auteurs : RBID : Pascal:09-0227822Descripteurs français
- Pascal (Inist)
- Valeur critique, Epaisseur couche, Epitaxie jet moléculaire, Semiconducteur III-V, Composé III-V, Mécanisme croissance, Diffraction RX, Indium, Relaxation, Structure cristalline, Paramètre cristallin, Déformation résiduelle, Croissance cristalline, Composé du gallium, Antimoniure de gallium, Composé de l'indium, Composé ternaire, Ga1-xInxSb, GaSb, Substrat GaSb, GaInSb, In, 6855J, 8115H, 8110A, 6166.
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Abstract
Several Ga1-xInxSb layers, capped with 1 μm of GaSb, were grown on GaSb(001) substrates by molecular beam epitaxy in a Varian Gen II Modular system using either the conventional sample growth position with substrate rotation, or a tilted sample position with no substrate rotation. The GaInSb layers were examined by X-ray diffraction (XRD) using both symmetrical and asymmetrical reflections. The "tilted sample method" gave a variation of ±25% in thickness of the Ga1-xInxSb layers, while the indium (In) content varied by ± 10% around the nominal value. The disappearance of thickness fringes in 004 XRD scans was used to determine the onset of relaxation, as determining the in-plane lattice constant for tilted samples was found to be difficult. Determining residual strain in samples grown by the tilted method was likewise found to be very difficult. The critical thickness for several In mole fractions between 5% and 19% was determined and was found to be from 2.2 to 2.7 times higher than predicted by Matthews and Blakeslee (1974) [J. Crystal Growth 27 (1974) 118] but lower than that predicted by People and Bean (1985) [Appl. Phys. Lett. 47 (1985) 322].
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Critical thickness of MBE-grown Ga<sub>1-x</sub>In<sub>x</sub>Sb (x<0.2) on GaSb</title><author><name sortKey="Nilsen, T A" uniqKey="Nilsen T">T. A. Nilsen</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electronics and Telecommunications, Norwegian University of Science and Technology</s1><s2>7491 Trondheim</s2><s3>NOR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Norvège</country><wicri:noRegion>7491 Trondheim</wicri:noRegion></affiliation></author><author><name sortKey="Breivik, M" uniqKey="Breivik M">M. Breivik</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electronics and Telecommunications, Norwegian University of Science and Technology</s1><s2>7491 Trondheim</s2><s3>NOR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Norvège</country><wicri:noRegion>7491 Trondheim</wicri:noRegion></affiliation></author><author><name sortKey="Selvig, E" uniqKey="Selvig E">E. Selvig</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Norwegian Defence Research Establishment, P.O. Box 25</s1><s2>2027 Kjeller</s2><s3>NOR</s3><sZ>3 aut.</sZ></inist:fA14><country>Norvège</country><wicri:noRegion>2027 Kjeller</wicri:noRegion></affiliation></author><author><name sortKey="Fimland, B O" uniqKey="Fimland B">B. O. Fimland</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electronics and Telecommunications, Norwegian University of Science and Technology</s1><s2>7491 Trondheim</s2><s3>NOR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Norvège</country><wicri:noRegion>7491 Trondheim</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">09-0227822</idno><date when="2009">2009</date><idno type="stanalyst">PASCAL 09-0227822 INIST</idno><idno type="RBID">Pascal:09-0227822</idno><idno type="wicri:Area/Main/Corpus">005711</idno><idno type="wicri:Area/Main/Repository">005786</idno></publicationStmt><seriesStmt><idno type="ISSN">0022-0248</idno><title level="j" type="abbreviated">J. cryst. growth</title><title level="j" type="main">Journal of crystal growth</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Critical value</term><term>Crystal growth</term><term>Crystal structure</term><term>Gallium antimonides</term><term>Gallium compounds</term><term>Growth mechanism</term><term>III-V compound</term><term>III-V semiconductors</term><term>Indium</term><term>Indium compounds</term><term>Lattice parameters</term><term>Layer thickness</term><term>Molecular beam epitaxy</term><term>Relaxation</term><term>Residual strain</term><term>Ternary compounds</term><term>XRD</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Valeur critique</term><term>Epaisseur couche</term><term>Epitaxie jet moléculaire</term><term>Semiconducteur III-V</term><term>Composé III-V</term><term>Mécanisme croissance</term><term>Diffraction RX</term><term>Indium</term><term>Relaxation</term><term>Structure cristalline</term><term>Paramètre cristallin</term><term>Déformation résiduelle</term><term>Croissance cristalline</term><term>Composé du gallium</term><term>Antimoniure de gallium</term><term>Composé de l'indium</term><term>Composé ternaire</term><term>Ga1-xInxSb</term><term>GaSb</term><term>Substrat GaSb</term><term>GaInSb</term><term>In</term><term>6855J</term><term>8115H</term><term>8110A</term><term>6166</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Several Ga<sub>1-x</sub>In<sub>x</sub>Sb layers, capped with 1 μm of GaSb, were grown on GaSb(001) substrates by molecular beam epitaxy in a Varian Gen II Modular system using either the conventional sample growth position with substrate rotation, or a tilted sample position with no substrate rotation. The GaInSb layers were examined by X-ray diffraction (XRD) using both symmetrical and asymmetrical reflections. The "tilted sample method" gave a variation of ±25% in thickness of the Ga<sub>1-x</sub>In<sub>x</sub>Sb layers, while the indium (In) content varied by ± 10% around the nominal value. The disappearance of thickness fringes in 004 XRD scans was used to determine the onset of relaxation, as determining the in-plane lattice constant for tilted samples was found to be difficult. Determining residual strain in samples grown by the tilted method was likewise found to be very difficult. The critical thickness for several In mole fractions between 5% and 19% was determined and was found to be from 2.2 to 2.7 times higher than predicted by Matthews and Blakeslee (1974) [J. Crystal Growth 27 (1974) 118] but lower than that predicted by People and Bean (1985) [Appl. Phys. Lett. 47 (1985) 322].</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0022-0248</s0></fA01><fA02 i1="01"><s0>JCRGAE</s0></fA02><fA03 i2="1"><s0>J. cryst. growth</s0></fA03><fA05><s2>311</s2></fA05><fA06><s2>7</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Critical thickness of MBE-grown Ga<sub>1-x</sub>In<sub>x</sub>Sb (x<0.2) on GaSb</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>The 15th International Conference on Molecular Beam Epitaxy (MBE-XV)</s1></fA09><fA11 i1="01" i2="1"><s1>NILSEN (T. A.)</s1></fA11><fA11 i1="02" i2="1"><s1>BREIVIK (M.)</s1></fA11><fA11 i1="03" i2="1"><s1>SELVIG (E.)</s1></fA11><fA11 i1="04" i2="1"><s1>FIMLAND (B. O.)</s1></fA11><fA12 i1="01" i2="1"><s1>WASILEWSKI (Z. R.)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>BERESFORD (R.)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Department of Electronics and Telecommunications, Norwegian University of Science and Technology</s1><s2>7491 Trondheim</s2><s3>NOR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="02"><s1>Norwegian Defence Research Establishment, P.O. Box 25</s1><s2>2027 Kjeller</s2><s3>NOR</s3><sZ>3 aut.</sZ></fA14><fA15 i1="01"><s1>National Research Council</s1><s3>CAN</s3><sZ>1 aut.</sZ></fA15><fA15 i1="02"><s1>Brown University</s1><s3>USA</s3><sZ>2 aut.</sZ></fA15><fA20><s1>1688-1691</s1></fA20><fA21><s1>2009</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13507</s2><s5>354000184939900140</s5></fA43><fA44><s0>0000</s0><s1>© 2009 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>12 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>09-0227822</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of crystal growth</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>Several Ga<sub>1-x</sub>In<sub>x</sub>Sb layers, capped with 1 μm of GaSb, were grown on GaSb(001) substrates by molecular beam epitaxy in a Varian Gen II Modular system using either the conventional sample growth position with substrate rotation, or a tilted sample position with no substrate rotation. The GaInSb layers were examined by X-ray diffraction (XRD) using both symmetrical and asymmetrical reflections. The "tilted sample method" gave a variation of ±25% in thickness of the Ga<sub>1-x</sub>In<sub>x</sub>Sb layers, while the indium (In) content varied by ± 10% around the nominal value. The disappearance of thickness fringes in 004 XRD scans was used to determine the onset of relaxation, as determining the in-plane lattice constant for tilted samples was found to be difficult. Determining residual strain in samples grown by the tilted method was likewise found to be very difficult. The critical thickness for several In mole fractions between 5% and 19% was determined and was found to be from 2.2 to 2.7 times higher than predicted by Matthews and Blakeslee (1974) [J. Crystal Growth 27 (1974) 118] but lower than that predicted by People and Bean (1985) [Appl. Phys. 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